pSemi Corp. Announces Next Generation UltraCMOS® Technology

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pSemi Corp. Announces Next Generation UltraCMOS® Technology

pSemi announced the release of UltraCMOS® 13, the next-generation of its proprietary RFSOI process running on GlobalFoundries’ 300 mm wafer fab. UltraCMOS 13 was tailored to improve low noise amplifier (LNA) and power amplifier (PA) performance and enable improved performance from integrated front-end components.

pSemi announced the release of UltraCMOS® 13, the next-generation of its proprietary RFSOI process running on GlobalFoundries’ 300 mm wafer fab. UltraCMOS 13 was tailored to improve low noise amplifier (LNA) and power amplifier (PA) performance and enable improved performance from integrated front-end components.

http://www.microwavejournal.com/rss/topic/3369-industry-newsIndustry Newshttps://www.microwavejournal.com/articles/32439-psemi-corp-announces-next-generation-ultracmos-technology

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