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November 16, 2018
EpiGaN Expands GaN Epiwafer Production Using Aixtron G5+C MOCVD Technology
EpiGaN Expands GaN Epiwafer Production Using Aixtron G5+C MOCVD Technology
EpiGaN headquartered in Hasselt/Belgium, has selected Aixtron’s G5+C MOCVD system to boost its manufacturing capability of large-diameter GaN on Si and GaN on SiC epiwafers.
EpiGaN headquartered in Hasselt/Belgium, has selected Aixtron’s G5+C MOCVD system to boost its manufacturing capability of large-diameter GaN on Si and GaN on SiC epiwafers.
http://www.microwavejournal.com/rss/topic/3369-industry-newsIndustry Newshttp://www.microwavejournal.com/articles/31353-epigan-expands-gan-epiwafer-production-using-aixtron-g5c-mocvd-technology
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