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September 25, 2019
Cree to Build World’s Largest SiC Device Manufacturing Facility in NY
Cree to Build World’s Largest SiC Device Manufacturing Facility in NY
Cree Inc. announced plans to establish a silicon carbide (SiC) corridor on the East Coast of the U.S. with the creation of the world’s largest SiC fabrication facility.
Cree Inc. announced plans to establish a silicon carbide (SiC) corridor on the East Coast of the U.S. with the creation of the world’s largest SiC fabrication facility.
http://www.microwavejournal.com/rss/topic/3369-industry-newsIndustry Newshttps://www.microwavejournal.com/articles/32885-cree-to-build-worlds-largest-sic-device-manufacturing-facility-in-ny
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